Iulia Salaoru, Qingjiang Li , Ali Khiat, Themistoklis Prodromakis
This work exploits the coexistence of both resistance and capacitance memory effects in TiO2 based two terminal cells.more details
Qingjiang Li, Ali Khiat, Iulia Salaoru, Hui Xu and Themistoklis Prodromakis
In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics.more details
Qingjiang Li, Ali Khiat, Iulia Salaoru, Christos Papavassiliou, and Themistoklis Prodromakis
Here we demonstrate that TiO2-based metal-insulator-metal devices are more than just a memory-resistor. They possess resistive, capacitive and inductive components that can concurrently be programmed; essentially exhibiting a convolution of memristive, memcapacitive and meminductive effects.more details
Serb, A., Berdan, R., Khiat, A., Papavassiliou, C. and Prodromakis, T.
We demonstrate a testing platform that allows the manipulation of memristor cross-bar arrays by use of little more than a computer with MATLAB, an mBED and some external components mounted on a PCB.more details
Origin of stochastic resistive switching in devices with phenomenologically identical initial states
Qingjiang, Li, Khiat, A., Salaoru, I., Hui, X. and Prodromakis, T.
Here we demonstrate the relation between pristine resistive states and distribution of filaments via modeling the switching dynamics by utilizing a current percolation circuit. We show that devices with identical initial resistive states could attain distinct plausible filamentary distributions and correspondingly manifest very dissimilar switching dynamics even when biased with similar stimuli.more details
Berdan, R., Khiat, A., Papavassiliou, C. and Prodromakis, T.
We propose a SPICE model that describes qualitatively real memristor device operation. Namely we introduce volatile effects, rate-dependent resistive switching and unipolar effects which can be tailored to influence together or separately the device's resistance.more details
Serb, A., Berdan, R., Khiat, A., Shari, L., Vasilaki, E., Papavassiliou, C. and Prodromakis, T.
This paper examines the widespread Biolek and Pershin models of the memristor in order to find out whether they support STDP in an event-based computation environment.more details
Wizenberg, R., Khiat, A., Berdan, R., Papavassiliou, C. and Prodromakis, T.
In this paper we present a practical approach to employ solid-state TiO2 memristors as tunable loads in filter configurations. First, memristive devices are employed in discrete realizations of tunable active filter topologies.more details
Salaoru, I., Khiat, A., Berdan, R., Quingjian, L., Papavassiliou, C. and Prodromakis, T.
This work exploits the switching dynamics of nanoscale Resistive Random Access Memory (ReRAM) cells with particular emphasis on the origin of the observed variability when consecutively cycled/programmed at distinct memory states.more details
Ali Khiat, Iulia Salaoru, and Themistoklis Prodromakis.
We demonstrate that indium–tin-oxide (ITO), when used as an active core material in metal–insulator–metal type devices, facilitates resistive switching.more details
Radu Berdan, Chuan Lim, Ali Khiat, Christos Papavassiliou and Themistoklis Prodromakis
Realizing large-scale circuits utilizing emerging nanoionic devices known as memristors depends on the accurate modeling of their behavior under a wide range of biasing conditions.more details
Iulia Salaoru, Ali Khiat, Qingjiang Li, Radu Berdan, and Themistoklis Prodromakis
In this study, we exploit the non-zero crossing current–voltage characteristics exhibited by nanoscale TiO2 based solid-state memristors.more details
Iulia Salaoru, Ali Khiat, Radu Berdan and Themistoklis Prodromakis
In this study, we provide the experimental evidence of the coexistence of resistive and capacitive features in nanoscale TiO2 based solid state Resistive Random Access Memory (ReRAM).more details
F. Perez-Diaz, E. Vasilaki, R. Berdan, A. Khiat, I. Salarou, C. Toumazou and T. Prodomakismore details
R. Berdan, T. Prodromakis, F.P. Diaz, E. Vasilaki, A. Khiat, I. Salaoru and C. Toumazou
We studied the memory mechanisms in emerging non-CMOS devices with a view to application in temporal pattern recognition and detection, inspired by the STP mechanisms.more details
B. Bhushan and T. Prodromakis
Biomimetics - Productsmore details
A. Gelencser, T. Prodromakis, C. Toumazou and T. Roska, “A Biomimetic Model of the Outer Plexiform Layer by Incorporating Memristive Devices
A. Gelencser, T. Prodromakis, C. Toumazou and T. Roska
In this paper we present a biorealistic model for the first part of the early vision processing by incorporating memristive nanodevices.more details
G. Indiveri, B. Linares-Barranco, R. Legenstein, G. Deligeorgis and T. Prodromakis
In this paper, we propose a novel hybrid memristor-CMOS neuromorphic circuit which represents a radical departure from conventional neuro-computing approaches, as it uses memristors to directly emulate the biophysics and temporal dynamics of real synapses.more details
C.K.K. Lim and T. Prodromakis.
Here, we introduce a novel memristive thresholding scheme that facilitates the detection of moving edges.more details
Z. Ye, M. Wu-Shihong and T. Prodromakis
In this paper we show how networks of memristive elements can be utilised to solve multiple shortest paths in a single network.more details
R. Berdan, T. Prodromakis, I. Salaoru, A. Khiat and C. Toumazou
In this paper, we investigate the AC performance of a variable gain amplifier that utilizes an in-house manufactured memristor as a gain setting element.more details
I. Salaoru, T. Prodromakis, A. Khiat and C. Toumazou
In this work, we investigate the effect of oxygen-enhanced TiO2 thin films on the switching dynamics of Pt/TiO2/Pt memristive nanodevices.more details
T Serrano-Gotarredona, T. Prodromakis, B Linares-Barranco
Here we propose a hybrid memristor-CMOS system architecture with the potential of implementing a large scale STDP learning spiking neural system.more details
Homeostatic plasticity in Bayesian spiking networks as Expectation Maximization with posterior constraints
S. Habenschuss, J. Bill, B. Nessler
This paper investigates how homeostatic intrinsic plasticity (that arguably can be implemented in neuromorphic hardware) facilitates synaptic learning in Bayesian spiking network models and renders circuit dynamics more robust against distortions and variability in individual units (e.g. mismatches in analog hardware). In particular, the examined intrinsic plasticity rule is compatible with the winner-take-all architectures employed in the PNEUMA project.more details
A 128x128 1.5% Contrast Sensitivity 0.9% FPN 3us Latency 4mW Asynchronous Frame-Free Dynamic Vision Sensor Using Transimpedance Amplifiers
T. Serrano-Gotarredona and B. Linares-Barranco
Silicon Retina modeling the magno-cellular retina-brain pathway.more details
T. Serrano-Gotarredona, T. Masquelier, T. Prodromakis, G. Indiveri, and B. Linares-Barranco
Implemetation of STDP with memristors.more details
A 1.5ns OFF/ON Switching-Time Voltage-Mode LVDS Driver/Receiver Pair for Asynchronous AER Bit-Serial Chip Grid Links with up to 40 Times Event-Rate Dependent Power Savings
C. Zamarreño-Ramos, R. Kulkarni, J. Silva-Martínez, T. Serrano-Gotarredona, and B. Linares-Barrancomore details
Multi-Casting Mesh AER: A Scalable Assembly Approach for Reconfigurable Neuromorphic Structured AER Systems. Application to ConvNets
C. Zamarreño-Ramos, A. Linares-Barranco, T. Serrano-Gotarredona, and B. Linares-Barranco
Routing techniques for multi-chip spiking systems.more details
A 0.35um Sub-ns Wake-up Time ON-OFF Switchable LVDS Driver-Receiver Chip I/O Pad Pair for Rate-Dependent Power Saving in AER Bit-Serial Links
C. Zamarreño-Ramos, T. Serrano-Gotarredona, and B. Linares-Barranco
Driver circuits for inter-chip bit-serial high-speed communicationsmore details
Comparison between frame-constrained fix-pixel-value and frame-free spiking-dynamic-pixel convNets for visual processing
C. Farabet, R. Paz, J. Pérez-Carrasco, C. Zamarreño-Ramos, A. Linares-Barranco, Y. LeCun, E. Culurciello, T. Serrano-Gotarredona, and B. Linares-Barranco
Comparison of frame-based vision versus event-based visionmore details
On spike-timing-dependent-plasticity, memristive devices, and building a self-learning visual cortex
C. Zamarreño-Ramos, L. A. Camuñas-Mesa, Jose A. Perez-Carrasco, T. Masquelier, T. Serrano-Gotarredona, and B. Linares-Barranco
Implementation of STDP with memristorsmore details
PRODROMAKIS T., TOUMAZOU C., CHUA L.
Memristors are dynamic electronic devices whose nanoscale realization has led to considerable research interest. However, their experimental history goes back two centuries.more details
PRODROMAKIS T., PEH B.P., PAPAVASSILIOU C., TOUMAZOU C.more details
GELENCSER A., PRODROMAKIS T., TOUMAZOU C., ROSKA T.
A biomimetic application of nanoscale memristors.more details
PRODROMAKIS T., SALAORU I., KHIAT A., TOUMAZOU C.
This paper provides experimental evidence on a switching mechanism that depends upon the expansion/contraction of a TiO2 thin film that serves as the active core for a nanoscale memristor, due to a re-oxidation/de-oxidation (reduction of TiO2) process supported at the top TiO2/Pt interface of the device.more details